E-beam Writer
- Raith EBPG5200ES
- Voltage: 100 kV
- Pattern Generator: 50 MHz
- Beam current: 100 pA to 200 nA
- Field size: 524 um x 524 um
- Minimum feature size: 7 nm
- Stitching: 15 nm (mean+3sigma)
- Overlay: 15 nm (mean+3sigma)
- Automated 10 sample holder airlock
- Sample size: 10 mm to 200 mm
- Z lift stage for thick/curved substrates