E-beam Writer

  • Raith EBPG5200ES
  • Voltage: 100 kV
  • Pattern Generator: 50 MHz
  • Beam current: 100 pA to 200 nA
  • Field size: 524 um x 524 um
  • Minimum feature size: 7 nm
  • Stitching: 15 nm (mean+3sigma)
  • Overlay: 15 nm (mean+3sigma)
  • Automated 10 sample holder airlock
  • Sample size: 1 cm to 6 inch
  • Z lift stage for thick/curved substrates