PECVD
- Plasma-Therm Versaline
- Parallel plate capacitance coupled plasma
- RF generator: 600 W at 13.56 MHz
- Low frequency generator: 600 W at 380 Hz
- Gases available: SiH4, NH3, N2O, H2, CH4, N2, He, SF6
- Films deposited: SiO2, SiN, a-Si, SiON, SiC
- In-situ thickness control
- Platen temperature up to 350 degC
- Film stress control by low frequency
- Sample size: small pieces up to 6” wafer
- Automatic chamber clean w/ OES endpoint
- Load lock