PECVD

  • Plasma-Therm Versaline
  • Parallel plate capacitance coupled plasma
  • RF generator: 600 W at 13.56 MHz
  • Low frequency generator: 600 W at 380 Hz
  • Gases available: SiH4, NH3, N2O, H2, CH4, N2, He, SF6
  • Films deposited: SiO2, SiN, a-Si, SiON, SiC
  • In-situ thickness control
  • Platen temperature up to 350 degC
  • Film stress control by low frequency
  • Sample size: small pieces up to 6” wafer
  • Automatic chamber clean w/ OES endpoint
  • Load lock